Institut für Nanotechnologie, Karlsruhe Institute of Technology, Karlsruhe, Germany.
Phys Rev Lett. 2010 Dec 31;105(26):266803. doi: 10.1103/PhysRevLett.105.266803. Epub 2010 Dec 20.
A general theory is developed to describe graphene with an arbitrary number of isolated impurities. The theory provides a basis for an efficient numerical analysis of the charge transport and is applied to calculate the Dirac-point conductivity σ of graphene with resonant scatterers. In the case of smooth resonant impurities the symmetry class is identified as DIII and σ grows logarithmically with increasing impurity concentration. For vacancies (or strong on-site potential impurities, class BDI) σ saturates at a constant value that depends on the vacancy distribution among two sublattices.
本文发展了一种理论，用于描述具有任意数量孤立杂质的石墨烯。该理论为有效分析电荷输运提供了基础，并应用于计算具有共振散射体的石墨烯的狄拉克点电导率σ。在光滑共振杂质的情况下，对称类被确定为 DIII，并且随着杂质浓度的增加，σ呈对数增长。对于空位（或强局域势杂质，类 BDI），σ在一个常数处饱和，该常数取决于两个子晶格之间的空位分布。
