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电子束诱导沉积和后处理工艺可在 Si(100)上局部生成清洁的二氧化钛纳米结构。

Electron-beam-induced deposition and post-treatment processes to locally generate clean titanium oxide nanostructures on Si(100).

机构信息

Lehrstuhl für Physikalische Chemie II, Universität Erlangen-Nürnberg, Erlangen, Germany.

出版信息

Nanotechnology. 2011 Feb 25;22(8):085301. doi: 10.1088/0957-4484/22/8/085301. Epub 2011 Jan 17.

DOI:10.1088/0957-4484/22/8/085301
PMID:21242619
Abstract

We have investigated the lithographic generation of TiO(x) nanostructures on Si(100) via electron-beam-induced deposition (EBID) of titanium tetraisopropoxide (TTIP) in ultra-high vacuum (UHV) by scanning electron microscopy (SEM) and local Auger electron spectroscopy (AES). In addition, the fabricated nanostructures were also characterized ex situ via atomic force microscopy (AFM) under ambient conditions. In EBID, a highly focused electron beam is used to locally decompose precursor molecules and thereby to generate a deposit. A drawback of this nanofabrication technique is the unintended deposition of material in the vicinity of the impact position of the primary electron beam due to so-called proximity effects. Herein, we present a post-treatment procedure to deplete the unintended deposits by moderate sputtering after the deposition process. Moreover, we were able to observe the formation of pure titanium oxide nanocrystals (<100 nm) in situ upon heating the sample in a well-defined oxygen atmosphere. While the nanocrystal growth for the as-deposited structures also occurs in the surroundings of the irradiated area due to proximity effects, it is limited to the pre-defined regions, if the sample was sputtered before heating the sample under oxygen atmosphere. The described two-step post-treatment procedure after EBID presents a new pathway for the fabrication of clean localized nanostructures.

摘要

我们通过扫描电子显微镜 (SEM) 和局部俄歇电子能谱 (AES) 研究了钛四异丙醇盐 (TTIP) 在超高真空 (UHV) 中的电子束诱导沉积 (EBID) 在 Si(100) 上生成 TiO(x) 纳米结构。此外,还通过环境条件下的原子力显微镜 (AFM) 在原位对所制备的纳米结构进行了表征。在 EBID 中,使用高度聚焦的电子束局部分解前体分子,从而生成沉积物。这种纳米制造技术的一个缺点是由于所谓的近场效应,在初级电子束撞击位置附近会意外沉积材料。在此,我们提出了一种后处理程序,即在沉积过程后通过适度溅射来耗尽意外沉积的物质。此外,我们还能够在将样品在定义明确的氧气气氛中加热时原位观察到纯钛氧化物纳米晶体 (<100nm) 的形成。虽然由于近场效应,在辐照区域的周围也会发生未沉积结构的纳米晶体生长,但如果在将样品在氧气气氛下加热之前对样品进行溅射,则其仅限于预定义的区域。描述的 EBID 后两步后处理程序为制造清洁的局部纳米结构提供了一种新途径。

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