Groupe de Recherche en Biologie Végétale (GRBV), Université du Québec à Trois-Rivières, Trois-Rivières, Québec, Canada.
Plant Physiol Biochem. 2011 Mar;49(3):235-43. doi: 10.1016/j.plaphy.2010.11.002. Epub 2010 Nov 11.
Heat tolerance of Arabidopsis thaliana (WT) and its mutants, crr2-2, lacking NADPH-dehydrogenase (Ndh-pathway), and pgr5, deficient in proton gradient regulation and/or ferredoxin-quinone-reductase (FQR-pathway), was studied from 30 to 46°C. Chlorophyll fluorescence revealed that thermal damage to photosystem II (PSII) was maximal in WT plants following short-term exposure of leaves to moderate or high temperature stress. Thermal stress impaired the photosynthetic electron flow at oxidizing and reducing sides of PSII. This was deduced from the transformation of temperature dependent OJIP to OKP patterns, changes in the relative amplitudes of K-step fluorescence rise and F(v)/F(o) ratio. The amplitude of the K-peak that corresponds to the magnitude of damage to the oxygen evolving complex (OEC) in crr2-2 mutants was about 50% of that observed in WT plants exposed to 46°C. The damage to OEC in pgr5 mutants was relatively smaller and thus their PSII complexes were more heat tolerant. P700 oxidation-reduction kinetics following heat-stress revealed that photosystem I (PSI) complexes remained oxidizable either with 10-ms multiple turn-over flashes or far-red illumination but the complementary cyclic electron flow around PSI (CEF) was abolished in both mutants. With further increase in incubation temperature, CEF was fully suppressed even in WT. Thus, P700 turn-over was not enhanced following thermal stress. Furthermore, the experimental data predicts the onset of pseudocyclic electron transport with molecular oxygen as terminal acceptor in crr2-2 and pgr5 mutants but not in wild type Arabidopsis subjected to severe thermal-stress.
拟南芥(WT)及其突变体 crr2-2(缺乏 NADPH 脱氢酶(Ndh 途径))和 pgr5(质子梯度调节和/或铁氧还蛋白-醌还原酶(FQR 途径)缺陷)在 30 至 46°C 之间的耐热性进行了研究。叶绿素荧光表明,WT 植物叶片短期暴露于中等或高温胁迫下,PSII 热损伤最大。热应激损害了 PSII 氧化还原侧的光合电子流。这可以从温度依赖性 OJIP 向 OKP 模式的转变、K-步荧光上升的相对幅度和 F(v)/F(o) 比值的变化中推断出来。在 crr2-2 突变体中,对应于放氧复合体(OEC)损伤程度的 K-峰幅度约为暴露于 46°C 的 WT 植物的 50%。pgr5 突变体中 OEC 的损伤相对较小,因此它们的 PSII 复合物更耐热。热应激后 P700 氧化还原动力学表明,PSI 复合物在 10-ms 多次翻转闪光或远红光照射下仍可被氧化,但在两个突变体中,PSI 周围的互补循环电子流(CEF)被消除。随着孵育温度的进一步升高,即使在 WT 中,CEF 也被完全抑制。因此,热应激后 P700 周转没有增加。此外,实验数据预测了在 crr2-2 和 pgr5 突变体中,分子氧作为末端受体的拟循环电子传递的开始,但在严重热应激下的野生型拟南芥中没有。