International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Namiki, Tsukuba, Japan.
Nano Lett. 2011 Feb 9;11(2):651-6. doi: 10.1021/nl103773e. Epub 2011 Jan 24.
Gaining an understanding the dynamic behaviors of dopant atoms in silicon nanowires (SiNWs) is the key to achieving low-power and high-speed transistor devices using SiNWs. The segregation behavior of boron (B) and phosphorus (P) atoms in B- and P-doped SiNWs during thermal oxidation was closely observed using B local vibrational peaks and Fano broadening in optical phonon peaks of B-doped SiNWs by micro-Raman scattering. Electron spin resonance (ESR) signals from conduction electrons were used for P-doped SiNWs. Our results showed that B atoms preferentially segregate in the surface oxide layer, whereas P atoms tend to accumulate in the Si region around the interface of SiNWs. The radial distribution of P atoms in SiNWs was also investigated to prove the difference segregation behaviors between of P and B atoms.
了解掺杂原子在硅纳米线（SiNWs）中的动态行为是实现使用 SiNWs 的低功耗和高速晶体管器件的关键。通过微拉曼散射，使用 B 掺杂 SiNWs 中的 B 局部振动峰和光声峰中的 Fano 展宽，密切观察了 B 和 P 掺杂 SiNWs 在热氧化过程中 B 原子和 P 原子的分凝行为。来自传导电子的电子自旋共振（ESR）信号用于 P 掺杂 SiNWs。我们的结果表明，B 原子优先在表面氧化层中分凝，而 P 原子则倾向于在 SiNWs 界面周围的 Si 区域中积累。还研究了 SiNWs 中 P 原子的径向分布，以证明 P 和 B 原子之间的分凝行为的差异。
