SiNaPS Laboratory SP2M, UMR-E CEA/UJF-Grenoble 1, INAC, Grenoble, F-38054, France.
Nanotechnology. 2012 Jun 1;23(21):215702. doi: 10.1088/0957-4484/23/21/215702. Epub 2012 May 3.
The introduction of hydrogen chloride during the in situ doping of silicon nanowires (SiNWs) grown using the vapor-liquid-solid (VLS) mechanism was investigated. Compared with non-chlorinated atmospheres, the use of HCl with dopant gases considerably improves the surface morphology of the SiNWs, leading to extremely smooth surfaces and a greatly reduced tapering. Variations in the wire diameter are massively reduced for boron doping, and cannot be measured at 600 °C for phosphorous over several tens of micrometers. This remarkable feature is accompanied by a frozen gold migration from the catalyst, with no noticeable levels of gold clusters observed using scanning electron microscopy. A detailed study of the apparent resistivity of the NWs reveals that the dopant incorporation is effective for both types of doping. A graph linking the apparent resistivity to the dopant to silane dilution ratio is built for both types of doping and discussed in the frame of the previous results.
在使用汽-液-固（VLS）机制生长的硅纳米线（SiNWs）的原位掺杂过程中引入了氯化氢。与非氯化气氛相比，使用 HCl 与掺杂气体可以极大地改善 SiNWs 的表面形貌，导致表面极其光滑，锥度大大减小。对于硼掺杂，直径变化大大减少，在 600°C 下几十微米范围内的磷不能进行测量。这一显著特征伴随着金从催化剂中的冻结迁移，使用扫描电子显微镜观察不到明显的金簇。对 NWs 的表观电阻率的详细研究表明，两种掺杂类型的掺杂剂掺入都是有效的。为两种掺杂类型都构建了一个将表观电阻率与掺杂剂和硅烷稀释比联系起来的图表，并在之前的结果框架内进行了讨论。
