Henneghien Anne-Line, Tourbot Gabriel, Daudin Bruno, Lartigue Olivier, Désières Yohan, Gérard Jean-Michel
CEA, LETI, MINATEC, Grenoble, France.
Opt Express. 2011 Jan 17;19(2):527-39. doi: 10.1364/OE.19.000527.
The use of nanowires as active medium seems very promising for the development of high brightness LEDs. With a lower effective refractive index than bulk, semiconductor nanowire layers may lead to a high light extraction efficiency. We hereafter discuss the anisotropic properties of dense arrays of molecular beam epitaxy (MBE) grown gallium nitride (GaN) nanowires and the consequences on the optical design of nanowire based LEDs. In particular we show numerically that light extraction efficiency as high as 72% can be expected for GaN nanowires layer grown on a low cost Si substrate.
将纳米线用作有源介质对于高亮度发光二极管的发展似乎非常有前景。由于半导体纳米线层的有效折射率低于体材料，可能会带来高光提取效率。我们在此讨论分子束外延（MBE）生长的氮化镓（GaN）纳米线密集阵列的各向异性特性以及对基于纳米线的发光二极管光学设计的影响。特别是我们通过数值计算表明，在低成本硅衬底上生长的GaN纳米线层有望实现高达72%的光提取效率。
