Zhao Songrui, Lu Jiaying, Hai Xu, Yin Xue
Department of Electrical and Computer Engineering, McGill University, 3480 University Street, Montreal, QC H3A 0E9, Canada.
Micromachines (Basel). 2020 Jan 23;11(2):125. doi: 10.3390/mi11020125.
In this paper, we discuss the recent progress made in aluminum gallium nitride (AlGaN) nanowire ultraviolet (UV) light-emitting diodes (LEDs). The AlGaN nanowires used for such LED devices are mainly grown by molecular beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD); and various foreign substrates/templates have been investigated. Devices on Si so far exhibit the best performance, whereas devices on metal and graphene have also been investigated to mitigate various limitations of Si substrate, e.g., the UV light absorption. Moreover, patterned growth techniques have also been developed to grow AlGaN nanowire UV LED structures, in order to address issues with the spontaneously formed nanowires. Furthermore, to reduce the quantum confined Stark effect (QCSE), nonpolar AlGaN nanowire UV LEDs exploiting the nonpolar nanowire sidewalls have been demonstrated. With these recent developments, the prospects, together with the general challenges of AlGaN nanowire UV LEDs, are discussed in the end.
在本文中，我们讨论了氮化铝镓（AlGaN）纳米线紫外（UV）发光二极管（LED）的最新进展。用于此类LED器件的AlGaN纳米线主要通过分子束外延（MBE）和金属有机化学气相沉积（MOCVD）生长；并且已经研究了各种异质衬底/模板。到目前为止，在硅上的器件表现出最佳性能，而在金属和石墨烯上的器件也已被研究，以减轻硅衬底的各种限制，例如紫外光吸收。此外，还开发了图案化生长技术来生长AlGaN纳米线紫外LED结构，以解决自发形成的纳米线的问题。此外，为了减少量子限制斯塔克效应（QCSE），已经展示了利用非极性纳米线侧壁的非极性AlGaN纳米线紫外LED。随着这些最新进展，最后讨论了AlGaN纳米线紫外LED的前景以及一般挑战。
