基于硅的被动淬灭单光子计数雪崩二极管阵列中的闪烁诱导响应。

Scintillation induced response in passively-quenched Si-based single photon counting avalanche diode arrays.

作者信息

Spanoudaki Virginia Ch, Levin Craig S

机构信息

Molecular Imaging Program at Stanford (MIPS), Radiology Department, Stanford University School of Medicine, Stanford, California, USA.

出版信息

Opt Express. 2011 Jan 17;19(2):1665-79. doi: 10.1364/OE.19.001665.

DOI:10.1364/OE.19.001665

PMID:21263706

Abstract

An optical electrical model which studies the response of Si-based single photon counting arrays, specifically silicon photomultipliers (SiPMs), to scintillation light has been developed and validated with analytically derived and experimental data. The scintillator-photodetector response in terms of relative pulse height, 10%-90% rise/decay times to light stimuli of different rise times (ranging from 0.1 to 5 ns) and decay times (ranging from 1 to 50 ns), as well as for different decay times of the photodetector are compared in theory and simulation. A measured detector response is used as a reference to further validate the model and the results show a mean deviation of simulated over measured values of 1%.

摘要

已开发出一种光学电气模型，该模型研究基于硅的单光子计数阵列，特别是硅光电倍增管（SiPM）对闪烁光的响应，并通过解析推导数据和实验数据进行了验证。从理论和模拟两方面比较了闪烁体-光电探测器在相对脉冲高度、对不同上升时间（范围为0.1至5纳秒）和衰减时间（范围为1至50纳秒）的光刺激的10%-90%上升/衰减时间方面的响应，以及光电探测器不同衰减时间的响应。将测量的探测器响应用作参考以进一步验证该模型，结果表明模拟值与测量值的平均偏差为1%。