State Key Laboratory of Catalysis, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, P. O. Box 110, Dalian 116023, China.
Phys Chem Chem Phys. 2011 Mar 14;13(10):4715-23. doi: 10.1039/c0cp01620a. Epub 2011 Jan 31.
Various sized ZnS nanocrystals were prepared by treatment under H(2)S atmosphere. Resonance Raman spectra indicate that the electron-phonon coupling increases with increasing the size of ZnS. Surface and interfacial defects are formed during the treatment processes. Blue, green and orange emissions are observed for these ZnS. The blue emission (430 nm) from ZnS without treatment is attributed to surface states. ZnS sintered at 873 K displays orange luminescence (620 nm) while ZnS treated at 1173 K shows green emission (515 nm). The green luminescence is assigned to the electron transfer from sulfur vacancies to interstitial sulfur states, and the orange emission is caused by the recombination between interstitial zinc states and zinc vacancies. The lifetimes of the orange emission are much slower than that of the green luminescence and sensitively dependent on the treatment temperature. Controlling defect formation makes ZnS a potential material for photoelectrical applications.
采用 H(2)S 气氛处理的方法制备了不同粒径的 ZnS 纳米晶体。共振拉曼光谱表明，随着 ZnS 粒径的增大，电子-声子耦合增强。在处理过程中形成了表面和界面缺陷。这些 ZnS 发出蓝色、绿色和橙色光。未经处理的 ZnS 的蓝色发射（430nm）归因于表面态。在 873K 下烧结的 ZnS 显示橙色发光（620nm），而在 1173K 下处理的 ZnS 发出绿色发射（515nm）。绿色发光归因于硫空位到间隙硫态的电子转移，而橙色发光则是由间隙锌态和锌空位之间的复合引起的。橙色发射的寿命比绿色发光慢得多，并且对处理温度敏感。控制缺陷形成使 ZnS 成为光电应用的潜在材料。
