Institute of Fluid Science, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi 980-8577, Japan.
Nanotechnology. 2011 Mar 11;22(10):105301. doi: 10.1088/0957-4484/22/10/105301. Epub 2011 Feb 2.
We created a two-dimensional array of sub-10 nm Si-nanodiscs (Si-NDs), i.e. a 2D array of Si-NDs, with a highly ordered arrangement and dense NDs by using a new top-down technique comprising advanced damage-free neutral-beam (NB) etching and a bio-template (iron oxide core) as a uniform sub-10 nm etching mask. The bandgap energy (E(g)) of the fabricated 2D array of Si-NDs can be simply controlled from 2.2 to 1.3 eV by changing the ND thickness from 2 to 12 nm. Due to weak quantum confinement existing in the diameter direction resulting from the sub-10 nm Si-ND diameter, even though the thickness of the Si-ND is much larger than the Bohr radius of Si, E(g) is still larger than the 1.1 eV E(g) of bulk Si. Si-ND not only has wide controllable E(g) but also a high absorption coefficient due to quantum confinement in three dimensions. This new technique is a promising candidate for developing new nanostructures and could be integrated into the fabrication of nanoelectronic devices.
我们使用一种新的自上而下的技术，包括先进的无损中性束（NB）刻蚀和生物模板（氧化铁核）作为均匀的亚 10nm 刻蚀掩模，制造了具有高度有序排列和密集纳米盘的亚 10nm Si 纳米盘（Si-NDs）二维阵列。通过改变 ND 厚度从 2nm 到 12nm，所制备的二维 Si-ND 阵列的能带隙能量（E(g)）可以简单地从 2.2eV 控制到 1.3eV。由于亚 10nm Si-ND 直径的直径方向存在较弱的量子限制，即使 Si-ND 的厚度远大于 Si 的玻尔半径，E(g)仍大于体 Si 的 1.1eV E(g)。Si-ND 不仅具有宽可调能带隙，而且由于三维量子限制，具有高吸收系数。这种新技术是开发新型纳米结构的有前途的候选者，并可集成到纳米电子器件的制造中。
