Graduate School of Information Science and Technology, Hokkaido University, Kita 14, Nishi 9, Kita-ku, Sapporo, 060-0814, Japan.
Nanoscale Res Lett. 2012 Oct 24;7(1):587. doi: 10.1186/1556-276X-7-587.
The picosecond carrier dynamics in a closely packed Si-nanodisk (Si-ND) array with ultrathin potential barrier fabricated by neutral beam etching using bio-nano-templates was investigated by time-resolved photoluminescence (PL). The PL decay curves were analyzed as a function of photon energy by the global fitting method. We show three spectral components with different decay times, where the systematic energy differences of the spectral peaks are clarified: 2.03 eV for the fastest decaying component with a decay time τ = 40 ps, 2.02 eV for τ = 300 ps, and 2.00 eV for τ = 1.6 ns. These energy separations ranging from 10 to 30 meV among the emissive states can be attributed to the coupling of wavefunctions of carriers between neighboring NDs.
通过时间分辨光致发光（PL）研究了使用中性束刻蚀通过生物纳米模板制造的紧密堆积 Si-纳米盘（Si-ND）阵列中超薄势垒的皮秒载流子动力学。通过全局拟合方法分析了 PL 衰减曲线随光子能量的函数关系。我们展示了具有不同衰减时间的三个光谱分量，其中光谱峰的系统能量差异得到了澄清：最快衰减分量的衰减时间τ=40 ps，能量为 2.03 eV；τ=300 ps，能量为 2.02 eV；τ=1.6 ns，能量为 2.00 eV。这些发射态之间的能量分离范围为 10 至 30 meV，可以归因于相邻 ND 之间载流子波函数的耦合。
