硅片同步辐射段形貌的彭德耳效应条纹的实验和理论研究。
An experimental and theoretical study of pendellösung fringes in synchrotron section topographs of silicon wafers.
机构信息
Laboratory of Physics, Helsinki University of Technology, Otakaari 1 M, 02150 Espoo, Finland.
出版信息
J Xray Sci Technol. 1990 Jan 1;2(3):165-71. doi: 10.3233/XST-1990-2302.
PMID:21307552
Abstract
X-ray section topographs of nearly perfect Czochralski-grown wafers were made with synchrotron radiation having a continuous spectrum. An intensity curve measured from the x-ray film is compared to the calculated curve obtained using the dynamical theory of x-ray diffraction. A computer simulation of the topograph is also presented. A good agreement between theory and experiment is found except in the middle part of the topograph.
摘要
利用具有连续光谱的同步辐射对近乎完美的直拉法生长的晶圆进行了 X 射线截面形貌图拍摄。将从 X 射线胶片上测量的强度曲线与使用 X 射线衍射动力学理论获得的计算曲线进行了比较。还给出了形貌图的计算机模拟。理论与实验吻合得很好，除了在形貌图的中间部分。
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