Department of Physics and Astronomy, Seoul National University, Seoul 151-747, Korea.
ACS Nano. 2011 Mar 22;5(3):1915-20. doi: 10.1021/nn102916c. Epub 2011 Feb 10.
Scanning tunneling microscopy (STM) and density functional theory (DFT) calculations were used to investigate the surface morphology and electronic structure of graphene synthesized on Cu by low temperature chemical vapor deposition (CVD). Periodic line patterns originating from the arrangements of carbon atoms on the Cu surface passivate the interaction between metal substrate and graphene, resulting in flawless inherent graphene band structure in pristine graphene/Cu. The effective elimination of metal surface states by the passivation is expected to contribute to the growth of monolayer graphene on Cu, which yields highly enhanced uniformity on the wafer scale, making progress toward the commercial application of graphene.
扫描隧道显微镜（STM）和密度泛函理论（DFT）计算被用于研究通过低温化学气相沉积（CVD）在 Cu 上合成的石墨烯的表面形态和电子结构。源自 Cu 表面碳原子排列的周期性线图案使金属衬底和石墨烯之间的相互作用钝化，从而使原始石墨烯/Cu 中的无缺陷固有石墨烯能带结构成为可能。通过这种钝化作用，金属表面态的有效消除有望有助于在 Cu 上生长单层石墨烯，从而在晶圆级上实现高度均匀性的提高，为石墨烯的商业应用迈出了一步。
