Hedlund Jenny K, Estrada Tania G, Walker Amy V
Department of Chemistry and Biochemistry, University of Texas at Dallas, Richardson, Texas 75080, United States.
Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, Texas 75080, United States.
Langmuir. 2020 Mar 31;36(12):3119-3126. doi: 10.1021/acs.langmuir.9b03436. Epub 2020 Mar 19.
We have investigated the chemical bath deposition (CBD) of CuS using thioacetamide on functionalized self-assembled monolayers (SAMs) using scanning electron and optical microscopies, X-ray photoelectron spectroscopy, and time-of-flight secondary ion mass spectrometry. For all SAMs studied, the amount of CuS deposited is strongly dependent on the bath pH and can be attributed to the interaction of the SAM terminal groups with the chalcogenide ions present in solution. For -CH-terminated SAMs, there is a steady increase in the amount of CuS deposited with an increase in the bath pH because there is an increase in the concentration of chalcogenide ion. However, for -OH- and -COOH-terminated SAMs, we observe that the maximum amount of CuS is deposited at pH 10. We attribute this behavior to a competition between the repulsion of the chalcogenide ions by the negatively charged SAM terminal groups and an increase in the chalcogenide ion concentration with an increase in the bath pH. Using the interaction of the chalcogenide ions with the different SAM terminal functional groups, we demonstrate that CuS can be selectively deposited on the -CH-terminated areas of patterned -OH/-CH- and -COOH/-CH-terminated SAMs.
我们使用扫描电子显微镜、光学显微镜、X射线光电子能谱和飞行时间二次离子质谱，研究了在功能化自组装单分子层（SAMs）上通过硫代乙酰胺进行化学浴沉积（CBD）制备硫化铜（CuS）的过程。对于所有研究的SAMs，沉积的CuS量强烈依赖于浴液的pH值，这可归因于SAM末端基团与溶液中硫属化物离子的相互作用。对于以-CH结尾的SAMs，随着浴液pH值的增加，沉积的CuS量稳步增加，因为硫属化物离子的浓度增加。然而，对于以-OH-和-COOH结尾的SAMs，我们观察到在pH值为10时沉积的CuS量最大。我们将这种行为归因于带负电荷的SAM末端基团对硫属化物离子的排斥与浴液pH值增加时硫属化物离子浓度增加之间的竞争。利用硫属化物离子与不同SAM末端官能团的相互作用，我们证明了CuS可以选择性地沉积在图案化的-OH/-CH-和-COOH/-CH-末端SAMs的-CH-末端区域。
