Microanalysis of Materials, Institute of Materials Science, University of Kiel, 24143 Kiel, Germany.
Ultramicroscopy. 2011 Feb;111(3):245-50. doi: 10.1016/j.ultramic.2010.11.031. Epub 2010 Nov 30.
Aberration-corrected HRTEM is applied to explore the potential of NCSI contrast imaging to quantitatively analyse the complex atomic structure of misfit layered compounds and their incommensurate interfaces. Using the (PbS)(1.14)NbS(2) misfit layered compound as a model system it is shown that atom column position analyses at the incommensurate interfaces can be performed with precisions reaching a statistical accuracy of ±6pm. The procedure adopted for these studies compares experimental images taken from compound regions free of defects and interface modulations with a structure model derived from XRD experiments and with multi-slice image simulations for the corresponding NCSI contrast conditions used. The high precision achievable in such experiments is confirmed by a detailed quantitative analysis of the atom column positions at the incommensurate interfaces, proving a tetragonal distortion of the monochalcogenide sublattice.
像差校正高分辨透射电镜被应用于探索非晶层错衬度成像技术（NCSI）定量分析失配位错层状化合物及其失配界面复杂原子结构的潜力。以（PbS）（1.14）NbS（2）失配位错层状化合物为模型体系，结果表明，在失配界面处进行的原子列位置分析可以达到±6pm 的统计精度。这些研究采用的方法是将无缺陷和界面调制的化合物区域的实验图像与从 XRD 实验得到的结构模型以及相应 NCSI 对比条件下的多片层图像模拟进行比较。在这些实验中可以达到的高精度通过对失配位错界面处的原子列位置进行详细的定量分析得到了证实，证明了单硫属元素亚晶格的四方畸变。
