Division of Advanced Materials Science, Department of Chemistry, Pohang Accelerator Laboratory, Center for Electro-Photo Behaviors in Advanced Molecular Systems, BK School of Molecular Science, and Polymer Research Institute, Pohang University of Science and Technology (POSTECH), Pohang 790-784, Republic of Korea.
ACS Appl Mater Interfaces. 2011 Mar;3(3):765-73. doi: 10.1021/am101125d. Epub 2011 Feb 21.
A high temperature polyimide bearing anthracene moieties, poly(3,3'-di(9-anthracenemethoxy)-4,4'-biphenylene hexafluoroisopropylidenediphthalimide) (6F-HAB-AM PI) was synthesized. The polymer exhibits excellent thermal stability up to around 410 °C. This polymer is amorphous but orients preferentially in the plane of nanoscale thin films. In device fabrications of its nanoscale thin films with metal top and bottom electrodes, no diffusion of the metal atoms or ions between the polymer and electrodes was found; however, the aluminum bottom electrode had somewhat undergone oxide layer (about 1.2 nm thick) formation at the surface during the post polymer layer formation process, which was confirmed to have no significant influence on the device performance. The polymer thin film exhibited excellent unipolar and bipolar switching behaviors over a very small voltage range, less than ±2 V. Further, the PI films show repeatable writing, reading, and erasing ability with long reliability and high ON/OFF current ratio (up to 10(7)) in air ambient conditions as well as even at temperatures up to 200 °C.
一种含有蒽基团的高温聚酰亚胺，聚（3,3'-二（9-蒽甲氧基）-4,4'-联苯二酐六氟异丙基二邻苯二甲酰亚胺）（6F-HAB-AM PI）被合成出来。该聚合物表现出优异的热稳定性，最高可达约 410°C。这种聚合物是非晶态的，但在纳米级薄膜的平面内优先取向。在其纳米级薄膜的器件制备中，金属顶电极和底电极之间没有发现金属原子或离子的扩散；然而，在聚合物层形成后，铝底电极的表面发生了一定程度的氧化层（约 1.2nm 厚）形成，这被证实对器件性能没有显著影响。该聚合物薄膜在非常小的电压范围内表现出优异的单极和双极开关性能，小于±2V。此外，PI 薄膜在空气环境条件下以及甚至在 200°C 的温度下，具有可重复的写入、读取和擦除能力，可靠性高，导通/关断电流比（高达 10^7）。
