用于电阻变化随机存取存储器的带电极HfO₂ 薄膜的电阻切换特性
Resistance switching characteristics of HfO2 film with electrode for resistance change random access memory.
作者信息
Park In-Sung, Lee Joo-Ho, Lee Sunwoo, Ahn Jinho
机构信息
Information Display Research Institute, Hanyang University, Seoul 133-791, Korea.
出版信息
J Nanosci Nanotechnol. 2007 Nov;7(11):4139-42.
The electrode dependent resistance switching behaviors of amorphous HfO2 films grown by atomic layer deposition were systematically investigated. The low and high resistance states were successfully achieved for all the metal-insulator-metal resistor systems with Mo, Ru, and Pt symmetric electrodes. The characteristic reset and set voltages as well as the dynamic resistance ratio of the resistor device are strongly dependent on the electrode material with different work function. In addition, the different features for switching voltages with electrode are shown with annealing temperature.
系统研究了通过原子层沉积生长的非晶HfO2薄膜的电极相关电阻开关行为。对于所有具有Mo、Ru和Pt对称电极的金属-绝缘体-金属电阻器系统，均成功实现了低电阻态和高电阻态。电阻器器件的特征复位和设置电压以及动态电阻比强烈依赖于具有不同功函数的电极材料。此外，随着退火温度的变化，显示出与电极相关的开关电压的不同特征。
Zotero 插件