Materials Research Institute, The Pennsylvania State University, University Park, PA, USA.
IEEE Trans Ultrason Ferroelectr Freq Control. 2011 Feb;58(2):274-80. doi: 10.1109/TUFFC.2011.1804.
The coercive fields (E(C)) of Pb(In₀.₅Nb₀.₅)O₃-Pb(Mg(¹/₃)Nb(²/₃)O₃-PbTiO₃ (PIN-PMN-PT) ternary single crystals were found to be 5 kV/cm, double the value of binary Pb(Mg(¹/₃)Nb(²/₃)O₃-PbTiO₃ (PMNT) crystals, further increased to 6 to 9 kV/cm using Mn modifications. In addition to an increased EC, the acceptor modification resulted in the developed internal bias (E(int)), on the order of ~1 kV/cm. The piezoelectric shear properties of unmodified and Mn-modified PIN-PMN-PT crystals with various domain configurations were investigated. The shear piezoelectric coefficients and electromechanical coupling factors for different domain configurations were found to be >2000 pC/N and >0.85, respectively, with slightly reduced properties observed in Mn-modified tetragonal crystals. Fatigue/cycling tests performed on shearmode samples as a function of ac drive field level demonstrated that the allowable ac field levels (the maximum applied ac field before the occurrence of depolarization) were only ~2 kV/cm for unmodified crystals, less than half of their coercive field. Allowable ac drive levels were on the order of 4 to 6 kV/cm for Mn-modified crystals with rhombohedral/orthorhombic phase, further increased to 5 to 8 kV/cm in tetragonal crystals, because of their higher coercive fields. It is of particular interest that the allowable ac drive field level for Mn-modified crystals was found to be ≥ 60% of their coercive fields, because of the developed E(int), induced by the acceptor-oxygen vacancy defect dipoles.
(铌酸铅-镁铌酸铅-钛酸铅)三元单晶的(E(C))被发现为 5 kV/cm,是二元(铌酸铅-钛酸铅)(PMN-PT)晶体的两倍,通过锰改性进一步增加到 6 到 9 kV/cm。除了增加 E(C)外,受主改性还导致了内部偏置(E(int))的发展,约为 1 kV/cm。研究了具有不同畴构型的未改性和 Mn 改性的 PIN-PMN-PT 晶体的剪切压电性能。不同畴构型的剪切压电系数和机电耦合系数分别发现大于 2000 pC/N 和 0.85,而 Mn 改性的四方晶体观察到的性能略有降低。作为交流驱动场水平函数的剪切模式样品上进行的疲劳/循环测试表明,未改性晶体的允许交流场水平(发生去极化之前施加的最大交流场)仅为~2 kV/cm,不到其矫顽场的一半。对于具有菱方/正交相的 Mn 改性晶体,允许的交流驱动水平约为 4 到 6 kV/cm,在四方晶体中进一步增加到 5 到 8 kV/cm,因为它们具有更高的矫顽场。特别有趣的是,由于受主-氧空位缺陷偶极子引起的 E(int)的发展,Mn 改性晶体的允许交流驱动场水平被发现为其矫顽场的≥60%。