Quiroga Santiago David, Shehu Arian, Albonetti Cristiano, Murgia Mauro, Stoliar Pablo, Borgatti Francesco, Biscarini Fabio
Consiglio Nazionale delle Ricerche, Istituto per lo Studio dei Materiali Nanostrutturati, Bologna, Italy.
Rev Sci Instrum. 2011 Feb;82(2):025110. doi: 10.1063/1.3534007.
We present a home-built high-vacuum system for performing organic semiconductor thin-film growth and its electrical characterization during deposition (real-time) or after deposition (in situ). Since the environment conditions remain unchanged during the deposition and electrical characterization process, a direct correlation between growth mode and electrical properties of thin film can be obtained. Deposition rate and substrate temperature can be systematically set in the range 0.1-10 ML∕min and RT-150 °C, respectively. The sample-holder configuration allows the simultaneous electrical monitoring of up to five organic thin-film transistors (OTFTs). The OTFTs parameters such as charge carrier mobility μ, threshold voltage V(TH), and the on-off ratio I(on)∕I(off) are studied as a function of the semiconductor thickness, with a submonolayer accuracy. Design, operation, and performance of the setup are detailed. As an example, the in situ and real-time electrical characterization of pentacene TFTs is reported.
我们展示了一个自制的高真空系统，用于在沉积过程中（实时）或沉积后（原位）进行有机半导体薄膜生长及其电学表征。由于在沉积和电学表征过程中环境条件保持不变，因此可以获得薄膜生长模式与电学性质之间的直接关联。沉积速率和衬底温度可分别在0.1 - 10 ML∕min和室温 - 150 °C的范围内系统地设置。样品架配置允许同时对多达五个有机薄膜晶体管（OTFT）进行电学监测。研究了OTFT的参数，如载流子迁移率μ、阈值电压V(TH)和开/关比I(on)∕I(off)作为半导体厚度的函数，精度可达亚单层。详细介绍了该装置的设计、操作和性能。作为一个例子，报告了并五苯TFT的原位和实时电学表征。
