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急性高剂量 X 射线诱导 A549 细胞的基因组变化。

Acute high-dose X-radiation-induced genomic changes in A549 cells.

机构信息

a Max-Planck-Inst. für Molekulare Genetik, D-14195 Berlin, Germany.

出版信息

Radiat Res. 2011 Jun;175(6):700-7. doi: 10.1667/RR2341.1. Epub 2011 Mar 1.

Abstract

Accidents with ionizing radiation often involve single, acute high-dose exposures that can lead to acute radiation syndrome and late effects such as carcinogenesis. To study such effects at the cellular level, we investigated acute ionizing radiation-induced chromosomal aberrations in A549 adenocarcinoma cells at the genome-wide level by exposing the cells to an acute dose of 6 Gy 240 kV X rays. One sham-irradiated clone and four surviving irradiated clones were recovered by minimal dilution and further expanded and analyzed by chromosome painting and tiling-path array CGH, with the nonirradiated clone 0 serving as the control. Acute X-ray exposure induced specific translocations and changes in modal chromosome number in the four irradiated clones. Array CGH disclosed unique and recurrent genomic changes, predominantly losses, and revealed that the fragile sites FRA3B and FRA16D were preferential regions of genomic alterations in all irradiated clones, which is likely related to radioresistant S-phase progression and genomic stress. Furthermore, clone 4 displayed an increased radiosensitivity at doses >5 Gy. Pairwise comparisons of the gene expression patterns of all irradiated clones to the sham-irradiated clone 0 revealed an enrichment of the Gene Ontology term "M Phase" (P = 6.2 × 10(-7)) in the set of differentially expressed genes of clone 4 but not in those of clones 1-3. Ionizing radiation-induced genomic changes and fragile site expression highlight the capacity of a single acute radiation exposure to affect the genome of exposed cells by inflicting genomic stress.

摘要

意外的电离辐射通常涉及单次急性高剂量暴露,可导致急性辐射综合征和迟发性效应,如致癌作用。为了在细胞水平上研究这些效应,我们用 240 kV X 射线照射 A549 腺癌细胞,使其受到单次急性剂量 6 Gy,在全基因组水平上研究急性电离辐射诱导的染色体畸变。通过最低稀释恢复了一个假照射克隆和四个存活的照射克隆,并通过染色体原位杂交和平铺路径 array CGH 进一步扩展和分析,以未照射的克隆 0 作为对照。急性 X 射线照射在四个照射克隆中诱导了特异性易位和模式染色体数的改变。array CGH 揭示了独特的和反复出现的基因组变化,主要是缺失,并表明脆弱部位 FRA3B 和 FRA16D 是所有照射克隆中基因组改变的优先区域,这可能与放射抗性 S 期进展和基因组应激有关。此外,克隆 4 在 >5 Gy 剂量下表现出更高的放射敏感性。对所有照射克隆与假照射克隆 0 的基因表达模式进行两两比较,发现克隆 4 的差异表达基因中富集了“M 期”的基因本体论术语(P = 6.2×10(-7)),而克隆 1-3 则没有。电离辐射诱导的基因组变化和脆弱部位表达突出了单次急性辐射暴露通过造成基因组应激来影响暴露细胞基因组的能力。

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