GuangDong Province Key Laboratory of Display Material and Technology, School of Physics and Engineering, Sun Yat-sen University, Guangzhou, 510275, People's Republic of China.
Nanoscale. 2011 Apr;3(4):1850-4. doi: 10.1039/c0nr01007c. Epub 2011 Mar 7.
A novel lift-off method has been developed for fabricating patterned W(18)O(49) nanowires in vertical arrays and on a large scale. These W(18)O(49) nanowire arrays have an average diameter of about 30 nm, and their lengths range from 2-3 μm. In every pattern of a 2 inch sample, the nanowires exhibit the same morphology and growth density. They are single crystals with monoclinic structure and grow along the [010] direction. Field emission (FE) measurements show that they have a turn-on field of 6.2 V μm(-1) and their emission current density can reach 500 μA cm(-2) at an electric field of 10.9 V μm(-1). Because the W(18)O(49) nanowire patterns synthesized by this simple method still have good FE performance, comparable to many cathode nanostructures with excellent FE properties, it suggests that it may provide an effective and simple preparation technique for patterned growth of nanowire arrays in future FE applications.
一种新颖的脱模方法已经被开发出来，用于在垂直阵列和大规模上制造图案化的 W(18)O(49)纳米线。这些 W(18)O(49)纳米线阵列的平均直径约为 30nm，长度从 2-3μm 不等。在 2 英寸样品的每个图案中，纳米线都表现出相同的形态和生长密度。它们是单晶，具有单斜结构，沿[010]方向生长。场发射（FE）测量表明，它们的开启场为 6.2Vμm(-1)，在 10.9Vμm(-1)的电场下，发射电流密度可达 500μAcm(-2)。由于这种简单方法合成的 W(18)O(49)纳米线图案仍然具有良好的 FE 性能，可与许多具有优异 FE 性能的阴极纳米结构相媲美，这表明它可能为未来 FE 应用中的纳米线阵列图案化生长提供一种有效且简单的制备技术。
