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在 P3HT 表面上溅射的铝薄膜的生长和形态。

Growth and morphology of sputtered aluminum thin films on P3HT surfaces.

机构信息

Technische Universität München, Lehrstuhl für Funktionelle Materialien, Physik-Department E13, James-Franck-Strasse 1, 85747 Garching, Germany.

出版信息

ACS Appl Mater Interfaces. 2011 Apr;3(4):1055-62. doi: 10.1021/am101195m. Epub 2011 Mar 8.

Abstract

Growth and morphology of an aluminum (Al) contact on a poly(3-hexylthiophene) (P3HT) thin film are investigated with X-ray methods and related to the interactions at the Al:P3HT interface. Grazing incidence small-angle scattering (GISAXS) is applied in situ during Al sputter deposition to monitor the growth of the layer. A growth mode is found, in which the polymer surface is wetted and rapidly covered with a continuous layer. This growth type results in a homogeneous film without voids and is explained by the strong chemical interaction between Al and P3HT, which suppresses the formation of three-dimensional cluster structures. A corresponding three stage growth model (surface bonding, agglomeration, and layer growth) is derived. X-ray reflectivity shows the penetration of Al atoms into the P3HT film during deposition and the presence of a 2 nm thick intermixing layer at the Al:P3HT interface.

摘要

采用 X 射线方法研究了聚(3-己基噻吩)(P3HT)薄膜上铝(Al)接触的生长和形态,将其与 Al:P3HT 界面的相互作用相关联。在 Al 溅射沉积过程中,原位应用掠入射小角散射(GISAXS)监测层的生长。发现了一种生长模式,其中聚合物表面被润湿并迅速被连续层覆盖。这种生长类型导致无空隙的均匀薄膜,并通过 Al 和 P3HT 之间的强化学相互作用来解释,该相互作用抑制了三维团簇结构的形成。推导出相应的三个阶段生长模型(表面键合、团聚和层生长)。X 射线反射率表明在沉积过程中 Al 原子渗透到 P3HT 膜中,并且在 Al:P3HT 界面处存在 2nm 厚的混合层。

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