Technische Universität München, Lehrstuhl für Funktionelle Materialien, Physik-Department E13, James-Franck-Strasse 1, 85747 Garching, Germany.
ACS Appl Mater Interfaces. 2011 Apr;3(4):1055-62. doi: 10.1021/am101195m. Epub 2011 Mar 8.
Growth and morphology of an aluminum (Al) contact on a poly(3-hexylthiophene) (P3HT) thin film are investigated with X-ray methods and related to the interactions at the Al:P3HT interface. Grazing incidence small-angle scattering (GISAXS) is applied in situ during Al sputter deposition to monitor the growth of the layer. A growth mode is found, in which the polymer surface is wetted and rapidly covered with a continuous layer. This growth type results in a homogeneous film without voids and is explained by the strong chemical interaction between Al and P3HT, which suppresses the formation of three-dimensional cluster structures. A corresponding three stage growth model (surface bonding, agglomeration, and layer growth) is derived. X-ray reflectivity shows the penetration of Al atoms into the P3HT film during deposition and the presence of a 2 nm thick intermixing layer at the Al:P3HT interface.
采用 X 射线方法研究了聚（3-己基噻吩）（P3HT）薄膜上铝（Al）接触的生长和形态，将其与 Al:P3HT 界面的相互作用相关联。在 Al 溅射沉积过程中，原位应用掠入射小角散射（GISAXS）监测层的生长。发现了一种生长模式，其中聚合物表面被润湿并迅速被连续层覆盖。这种生长类型导致无空隙的均匀薄膜，并通过 Al 和 P3HT 之间的强化学相互作用来解释，该相互作用抑制了三维团簇结构的形成。推导出相应的三个阶段生长模型（表面键合、团聚和层生长）。X 射线反射率表明在沉积过程中 Al 原子渗透到 P3HT 膜中，并且在 Al:P3HT 界面处存在 2nm 厚的混合层。
