Electrical properties and far infrared optical conductivity of boron-doped single-walled carbon nanotube films.

Here we report a new approach for producing clean and homogeneous boron-doped single-walled carbon nanotubes. This approach combines the homogeneous dispersion of B(n)O(m)(+) ionic molecules over the nanotube surfaces in a liquid solution, with a high temperature chemical reaction that incorporates the boron atoms into the sp(2) carbon network of the nanotube wall. A comparative study of sheet resistance versus optical transmission in nanotube network films with and without boron-doping is also presented. Although electron energy loss spectroscopy revealed very low B-doping levels (<1 at.%), the dc conductivity of doped samples was raised by a factor of 3.4. Changes in the free carrier contribution to the optical conductivity of single-walled carbon nanotube (SWCNT) films induced by boron-doping was also studied via optical transmission in the far-infrared (IR) (50-7000 cm(-1)). A Drude model was fitted to the changes in the far-IR conductivity to quantify the additional free carrier concentration induced by the B-doping.