A grazing incidence small-angle x-ray scattering analysis on capped Ge nanodots in layer structures.

The grazing incidence small-angle x-ray scattering (GISAXS) intensity from buried Ge nanodots is examined both by GISAXS/reflectivity measurements and by simulations with distorted wave Born approximation (DWBA). The validity and the condition of using the Born approximation (BA) are discussed using simulations based on the layer structures modeled from a reflectivity analysis. As expected in the previous kinematic analysis, use of the BA is reasonable in determining the size and the shape of very small or thin nanodots. Several effects of layer structures on the GISAXS analysis are discussed.