Department of Materials Science and Engineering, Kyoto University, Kyoto 606-8501, Japan.
J Phys Condens Matter. 2010 Dec 1;22(47):474003. doi: 10.1088/0953-8984/22/47/474003. Epub 2010 Nov 15.
The grazing incidence small-angle x-ray scattering (GISAXS) intensity from buried Ge nanodots is examined both by GISAXS/reflectivity measurements and by simulations with distorted wave Born approximation (DWBA). The validity and the condition of using the Born approximation (BA) are discussed using simulations based on the layer structures modeled from a reflectivity analysis. As expected in the previous kinematic analysis, use of the BA is reasonable in determining the size and the shape of very small or thin nanodots. Several effects of layer structures on the GISAXS analysis are discussed.
通过掠入射小角 X 射线散射（GISAXS）/反射率测量和基于扭曲波玻恩近似（DWBA）的模拟，研究了埋置 Ge 纳米点的掠入射小角 X 射线散射（GISAXS）强度。利用基于反射率分析建模的层结构的模拟，讨论了使用 Born 近似（BA）的有效性和条件。正如之前的运动学分析所预期的那样，在确定非常小或薄的纳米点的尺寸和形状时，使用 BA 是合理的。还讨论了层结构对 GISAXS 分析的几种影响。
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