National Research Institute for Materials Science, Tsukuba 305-0044, Japan.
J Phys Condens Matter. 2010 May 5;22(17):175006. doi: 10.1088/0953-8984/22/17/175006. Epub 2010 Apr 7.
By means of scanning tunnelling microscopy and spectroscopy, we have investigated the electronic structure of Bi nanolines on clean and H-passivated Si(100) surfaces. Maps of the local density of states (LDOS) images of the Bi nanolines are presented for the first time. The spectra obtained for nanolines on a clean Si surface and the LDOS images agree with ab initio predicted spectra for the Haiku structure. For nanolines on a H-passivated surface, the spectra obtained suggest that the Bi nanoline may locally pin the surface Fermi level, and the LDOS images taken at low bias show a distribution of states different to what was expected at the Bi nanolines. The results are discussed with respect to use of the nanolines as atomic wire interconnections.
通过扫描隧道显微镜和光谱学，我们研究了清洁和 H 钝化的 Si(100)表面上的 Bi 纳米线的电子结构。首次呈现了 Bi 纳米线的局域态密度（LDOS）图像的图谱。对于清洁 Si 表面上的纳米线获得的光谱和 LDOS 图像与 Haiku 结构的 ab -initio 预测光谱一致。对于 H 钝化表面上的纳米线，获得的光谱表明 Bi 纳米线可能局部固定表面费米能级，并且在低偏压下获得的 LDOS 图像显示出与在 Bi 纳米线处预期的不同的态分布。结果是根据将纳米线用作原子线互连来讨论的。
