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Gd5Si2Ge2 和 Gd5Si2Ge1.9M0.1(M = Ga,Cu)的磁性结构。

Magnetic structure of Gd5Si2Ge2 and Gd5Si2Ge1.9M0.1 (M = Ga, Cu).

机构信息

Instituto de Ciencia de Materiales de Aragón, Departamento de Física de la Materia Condensada, CSIC-University of Zaragoza, Zaragoza, Spain.

出版信息

J Phys Condens Matter. 2010 Nov 10;22(44):446003. doi: 10.1088/0953-8984/22/44/446003. Epub 2010 Oct 22.

Abstract

Powder x-ray diffraction patterns of the doped compounds Gd(5)Si(2)Ge(1.9)M(0.1) (M = Ga, Cu) show the same crystal structure, orthorhombic Gd(5)Si(4)-type, in the ferromagnetic and paramagnetic phases. This is different from Gd(5)Si(2)Ge(2), whose paramagnetic phase is monoclinic. The magnetic structure at low temperature, solved from diffraction experiments with hot neutrons, is the same in all the three compounds, collinear ferromagnetic with moments along the crystal b-axis, or F(y)F(By) according to Bertaut's notation. These results, combined with those of heat capacity and magnetocaloric effect, indicate, similarly to Gd(5)Si(4), a second-order, purely magnetic, transition in the doped compounds explaining the absence of hysteresis.

摘要

掺杂化合物 Gd(5)Si(2)Ge(1.9)M(0.1)(M = Ga、Cu)的粉末 X 射线衍射图谱在铁磁相与顺磁相均显示出相同的晶体结构,为正交的 Gd(5)Si(4)-型。这与 Gd(5)Si(2)Ge(2)不同,后者的顺磁相为单斜相。低温下的磁结构通过热中子衍射实验确定,在所有三种化合物中均相同,沿晶体 b 轴的局域铁磁有序,根据 Bertaut 的符号表示为 F(y)F(By)。这些结果与比热和磁热效应的结果相结合,表明与 Gd(5)Si(4)类似,掺杂化合物中存在二级纯磁转变,这解释了其无滞后的现象。

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