Semiconductor Physics Research Center, School of Semiconductor and Chemical Engineering, Chonbuk National University, Chonju, South Korea.
Opt Lett. 2011 Mar 15;36(6):802-4. doi: 10.1364/OL.36.000802.
This Letter reports on the fabrication of hybrid white-light-emitting diodes made of semiconductor nanocrystals (NCs) integrated on InGaN/GaN LEDs. Using core type and core/shell type CdSe NCs, the white light properties are systematically engineered for white light generation with high color rendering index (CRI). Unlike CdSe/ZnS core/shell NCs, which exhibited a unique narrowband edge emission, core type CdSe NCs offered extended broad emission toward orange/red wavelengths associated with deep trap states. Consequently, the light-emitting properties of the devices showed strong dependence on the type of NCs used, and devices with CdSe NCs offered admirable characteristics, such as Commission Internationale d'Eclairage coordinates of (0.356, 0.330) and a CRI as high as 87.4.
这封信件报告了一种由半导体纳米晶体（NCs）与 InGaN/GaN 发光二极管集成的混合白光发光二极管的制作。通过使用核壳型和核/壳型 CdSe NCs，系统地设计了白光特性，以实现具有高显色指数（CRI）的白光生成。与表现出独特的窄带边缘发射的 CdSe/ZnS 核壳 NCs 不同，核型 CdSe NCs 提供了与深陷阱态相关的扩展宽带橙色/红色波长发射。因此，器件的发光性能强烈依赖于所用 NCs 的类型，而具有 CdSe NCs 的器件提供了令人钦佩的特性，例如国际照明委员会（Commission Internationale d'Eclairage）坐标为（0.356，0.330）和高达 87.4 的 CRI。
