Chung Wonkeun, Jung Hyunchul, Lee Chang Hun, Kim Sung Hyun
Department of Chemical and Biological Engineering, Korea University, Seoul 136-713, Republic of Korea.
J Nanosci Nanotechnol. 2012 Jul;12(7):6069-73. doi: 10.1166/jnn.2012.6289.
In this study, the yellow emitting cubic structure of Sr0.95Zn0.05Se:Eu2+ phosphors were prepared by high temperature solid state reaction. The Sr0.95Zn0.05Se:Eu2+ phosphors exhibited strong excitation intensity under 400-460 nm region, and broad band emission appeared at around 545-600 nm due to the d-f transition of Eu2+. To enhance the red emission, HDA/TOP/TOPO capped CdSe/ZnS NCs were synthesized via fast nucleation and slow growth method. The narrow emission peak was located at 615 nm with 69% of high quantum yield. Bright white emission was generated by combining a 460 nm InGaN LED chip with CdSe/ZnS NCs and Sr0.95Zn0.05Se:Eu2+ hybrid phosphors. The fabricated white LEDs showed warm white light with acceptable CIE chromaticity coordinate variation from (0.343, 0.255) at 20 mA to (0.335, 0.250) at 50 mA. The addition of CdSe/ZnS NCs contributed to the extension of white light spectrum by supplement of the red region. The color rendering index was largely enhanced from 41.7 to 79.7 compared to the Sr0.95Zn0.05Se:Eu2+ based phosphors white LED.
在本研究中,通过高温固相反应制备了发射黄色光的立方结构Sr0.95Zn0.05Se:Eu2+ 荧光粉。Sr0.95Zn0.05Se:Eu2+ 荧光粉在400 - 460 nm区域表现出较强的激发强度,由于Eu2+ 的d - f跃迁,在545 - 600 nm左右出现宽带发射。为了增强红色发射,采用快速成核和缓慢生长法合成了HDA/TOP/TOPO包覆的CdSe/ZnS纳米晶。窄发射峰位于615 nm,量子产率高达69%。通过将460 nm的InGaN LED芯片与CdSe/ZnS纳米晶和Sr0.95Zn0.05Se:Eu2+ 混合荧光粉相结合,产生了明亮的白色发射。制备的白光发光二极管呈现出暖白色光,其CIE色度坐标从20 mA时的(0.343, 0.255)到50 mA时的(0.335, 0.250)有可接受的变化。CdSe/ZnS纳米晶的加入通过补充红色区域有助于扩展白光光谱。与基于Sr0.95Zn0.05Se:Eu2+ 荧光粉的白光发光二极管相比,显色指数从41.7大幅提高到79.7。