Ahn Cheol Hyoun, Kim Young Yi, Cho Hyung Koun
School of Advanced Materials Science and Engineering, Sungkyunkwan University, 300 Cheoncheon-dong, Jangan-gu, Suwon, Gyeonggi-do 440-746, Korea.
J Nanosci Nanotechnol. 2011 Jan;11(1):458-62. doi: 10.1166/jnn.2011.3196.
This study examined the effect of the synthesis temperatures on the characteristics of vertically aligned Ga-doped ZnO (GZO) nanorods grown on a ZnO template by thermal evaporation using Zn and Ga sources. The increase in synthesis temperature at less than 700 degrees C induced stress relaxation relative to the ZnO template due to the suppression of defect generation by the formation of nanorods, while a further increase resulted in an increase in compressive strain due to dominant Ga doping. The increase in Ga concentration in the GZO nanorods with increasing synthesis temperature was also confirmed by X-ray photoelectron spectroscopy and photoluminescence. The best conductivity was observed in the GZO nanorods grown at 800 degrees C. On the other hand, the GZO nanorods synthesized at 900 degrees C showed less conductivity and weak near-band-edge emission properties due to the generation of defects from the excess Ga.
本研究考察了合成温度对通过热蒸发使用锌源和镓源在氧化锌模板上生长的垂直排列的镓掺杂氧化锌（GZO）纳米棒特性的影响。在低于700摄氏度时合成温度的升高，由于纳米棒的形成抑制了缺陷产生，相对于氧化锌模板诱导了应力松弛，而进一步升高温度则由于主要的镓掺杂导致压应变增加。通过X射线光电子能谱和光致发光也证实了随着合成温度升高GZO纳米棒中镓浓度的增加。在800摄氏度生长的GZO纳米棒中观察到最佳导电性。另一方面，在900摄氏度合成的GZO纳米棒由于过量的镓产生缺陷而显示出较低的导电性和较弱的近带边发射特性。
