Siva Vantari, Park Kwangwook, Kim Min Seok, Kim Yeong Jae, Lee Gil Ju, Kim Min Jung, Song Young Min
School of Electrical Engineering and Computer Science, Gwangju Institute of Science and Technology, Gwangju, 61005, Republic of Korea.
Korea Advanced Nano Fab Center, Suwon, Gyeonggi-do, 16229, Republic of Korea.
Nanoscale Res Lett. 2019 Mar 28;14(1):110. doi: 10.1186/s11671-019-2920-3.
The phosphorus-doped ZnO nanorods were prepared using hydrothermal process, whose structural modifications as a function of doping concentration were investigated using X-ray diffraction. The dopant concentration-dependent enhancement in length and diameter of the nanorods had established the phosphorus doping in ZnO nanorods. The gradual transformation in the type of conductivity as observed from the variation of carrier concentration and Hall coefficient had further confirmed the phosphorus doping. The modification of carrier concentration in the ZnO nanorods due to phosphorus doping was understood on the basis of the amphoteric nature of the phosphorus. The ZnO nanorods in the absence of phosphorus showed the photoluminescence (PL) in the range of the ultraviolet (UV) and visible regimes. The UV emission, i.e. near-band-edge emission of ZnO, was found to be red-shifted after the doping of phosphorus, which was attributed to donor-acceptor pair formation. The observed emissions in the visible regime were due to the deep level emissions that were aroused from various defects in ZnO. The Al-doped ZnO seed layer was found to be responsible for the observed near-infrared (NIR) emission. The PL emission in UV and visible regimes can cover a wide range of applications from biological to optoelectronic devices.
采用水热法制备了磷掺杂的ZnO纳米棒，利用X射线衍射研究了其结构随掺杂浓度的变化。纳米棒长度和直径随掺杂剂浓度的增加证实了ZnO纳米棒中存在磷掺杂。从载流子浓度和霍尔系数的变化观察到的导电类型的逐渐转变进一步证实了磷掺杂。基于磷的两性性质，理解了磷掺杂导致ZnO纳米棒中载流子浓度的变化。未掺杂磷的ZnO纳米棒在紫外和可见光区域呈现光致发光（PL）。发现磷掺杂后，ZnO的紫外发射即近带边发射发生红移，这归因于施主-受主对的形成。在可见光区域观察到的发射是由于ZnO中各种缺陷引起的深能级发射。发现Al掺杂的ZnO种子层是观察到的近红外（NIR）发射的原因。紫外和可见光区域的PL发射可涵盖从生物到光电器件的广泛应用。
