Park N K, Lee S Y, Lee T J
Institute of Clean Technology, Yeungnam University, 712-749, Korea
J Nanosci Nanotechnol. 2011 Jan;11(1):614-8. doi: 10.1166/jnn.2011.3246.
A zinc oxide single-crystal wire was synthesized for application as a gas-sensing material for hydrogen sulfide, and its gas-sensing properties were investigated in this study. The gas sensor consisted of a ZnO thin film as the buffer layer and a ZnO single-crystal wire. The ZnO thin film was deposited over a patterning silicon substrate with a gold electrode by the CFR method. The ZnO single-crystal wire was synthesized over the ZnO thin film using zinc and activated carbon as the precursor for the thermal evaporation method at 800 degrees C. The electrical properties of the gas sensors that were prepared for the growth of ZnO single-crystal wire varied with the amount of zinc contained in the precursor. The charged current on the gas sensors increased with the increasing amount of zinc in the precursor. It was concluded that the charged current on the gas sensors was related to ZnO single-crystal wire growth on the silicon substrate area between the two electrodes. The charged current on the gas sensor was enhanced when the ZnO single-crystal wire was exposed to a H2S stream. The experimental results obtained in this study confirmed that a ZnO single-crystal wire can be used as a gas sensor for H2S.
合成了一种氧化锌单晶线，用作硫化氢气体传感材料，并在本研究中对其气敏特性进行了研究。该气体传感器由作为缓冲层的ZnO薄膜和ZnO单晶线组成。通过化学气相沉积（CFR）法在带有金电极的图案化硅衬底上沉积ZnO薄膜。以锌和活性炭为前驱体，在800℃下采用热蒸发法在ZnO薄膜上合成ZnO单晶线。为生长ZnO单晶线而制备的气体传感器的电学性质随前驱体中锌含量的变化而变化。气体传感器上的充电电流随着前驱体中锌含量的增加而增大。得出结论，气体传感器上的充电电流与两个电极之间硅衬底区域上ZnO单晶线的生长有关。当ZnO单晶线暴露于H2S气流中时，气体传感器上的充电电流增强。本研究获得的实验结果证实，ZnO单晶线可作为H2S气体传感器。
