透明衬底上垂直排列的长ZnO纳米棒的制备与表征

Fabrication and characterization of vertically aligned long ZnO nanorods on transparent substrate.

作者信息

Kar Jyoti Prakash, Choi Ji-Hyuk, Das Sachindra Nath, Xiong Junjie, Lee Min-Jung, Lee Tae Il, Myoung Jae-Min

机构信息

Information and Electronic Materials Research Laboratory, Department of Materials Science and Engineering, Yonsei University, 134 Shinchon-Dong, Seoul 120-749, Republic of Korea.

出版信息

J Nanosci Nanotechnol. 2011 Mar;11(3):2185-90. doi: 10.1166/jnn.2011.3538.

DOI:10.1166/jnn.2011.3538

PMID:21449367

Abstract

Vertically aligned long ZnO nanorods (NRs) were grown by metal organic chemical vapor deposition (MOCVD) technique. Prior to the NRs growth Ga-doped ZnO (GZO) film was deposited by DC sputtering technique on glass substrates. The length and width of the NRs were 25 microm and 450-500 nm, respectively. Structural and optical properties of the NRs were investigated after the growth. The NRs were single crystalline in nature with the preferred growth along c-axis. The diffusion of Ga atoms in the bottom of the NRs during the growth is detected. A prominent near band edge emission of NRs was observed from room-temperature photoluminescence study. Electrical characteristics across the NRs-thin film hybrid structure were measured with UV exposure, where the rise and fall of the photocurrent was exponential in nature due to the desorption and adsorption of oxygen in the surface.

摘要

通过金属有机化学气相沉积（MOCVD）技术生长了垂直排列的长ZnO纳米棒（NRs）。在生长NRs之前，通过直流溅射技术在玻璃基板上沉积了Ga掺杂的ZnO（GZO）薄膜。NRs的长度和宽度分别为25微米和450 - 500纳米。生长后对NRs的结构和光学性质进行了研究。NRs本质上是单晶，沿c轴择优生长。检测到生长过程中Ga原子在NRs底部的扩散。通过室温光致发光研究观察到NRs有显著的近带边发射。用紫外线照射测量了NRs - 薄膜混合结构的电学特性，由于表面氧的解吸和吸附，光电流的上升和下降本质上是指数型的。