Li Chun, Fang Guojia, Ren Yaoyao, Fu Qiang, Zhao Xingzhong
Department of Physics and Center of Nanoscience and Nanotechnology Research, Wuhan University, Wuhan, 430072, P. R. China.
J Nanosci Nanotechnol. 2006 May;6(5):1467-73. doi: 10.1166/jnn.2006.312.
ZnO nanostructures including nanorod and nanotower were synthesized on Ag nanoisland coated Si substrate by thermal evaporation and vapor phase transport at atmospheric pressure. The as-prepared ZnO nanorods and nanotowers were single crystal growing along [0001] direction. The growth of ZnO nanostructures strongly depended on the surface morphology of the nanoisland Ag film deposited by electroless nanoelectrochemistry. The growth mechanism of the ZnO nanostructures was proposed on the basis of experimental data. A strong room-temperature photoluminescence in ZnO nanostructures has been demonstrated. The growth technique would be of particular interest for direct integration in the current silicon-technology-based optoelectronic devices.
通过常压热蒸发和气相输运，在涂覆有银纳米岛的硅衬底上合成了包括纳米棒和纳米塔在内的氧化锌纳米结构。所制备的氧化锌纳米棒和纳米塔是沿[0001]方向生长的单晶。氧化锌纳米结构的生长强烈依赖于通过无电镀纳米电化学沉积的纳米岛银膜的表面形态。基于实验数据提出了氧化锌纳米结构的生长机制。已证明氧化锌纳米结构具有很强的室温光致发光。该生长技术对于直接集成到当前基于硅技术的光电器件中可能会特别受关注。
