Yang Yang, Pandey K K M, Chen J S, Chow G M, Hu J F
Department of Materials Science and Engineering, National University of Singapore, 119260, Republic of Singapore.
J Nanosci Nanotechnol. 2011 Mar;11(3):2607-10. doi: 10.1166/jnn.2011.2702.
In this work, effects of exchange coupling of soft magnetic layer on switching field and magnetization reversal behaviour of CoPt-SiO2(soft)/CoPt-SiO2(hard) exchange coupled media were investigated. With increasing the thickness of the soft layer, both the coercivity and magnetization squareness of composite media decreased. Soft layer thickness 4 nm and below was more effective to significantly reduce the switching field than that above 4 nm. More incoherent switching behavior was observed with increasing soft layer thickness.
在本工作中，研究了软磁层的交换耦合对CoPt-SiO2（软）/CoPt-SiO2（硬）交换耦合介质的开关场和磁化反转行为的影响。随着软层厚度的增加，复合介质的矫顽力和磁化矩形比均降低。与4nm以上相比，4nm及以下的软层厚度对显著降低开关场更有效。随着软层厚度的增加，观察到更多的非相干开关行为。
