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双注入锁定光电振荡器中的杂散模式抑制

Spurious mode reduction in dual injection-locked optoelectronic oscillators.

作者信息

Okusaga O, Adles E J, Levy E C, Zhou W, Carter G M, Menyuk C R, Horowitz M

机构信息

US Army Research Laboratory, Adelphi, Maryland, USA.

出版信息

Opt Express. 2011 Mar 28;19(7):5839-54. doi: 10.1364/OE.19.005839.

DOI:10.1364/OE.19.005839
PMID:21451609
Abstract

Optoelectronic oscillators (OEOs) are promising sources of low phase noise radio frequency (RF) signals. However, at X-band frequencies, the long optical fiber delay line required for a high oscillator Q also leads to spurious modes (spurs) spaced too narrowly to be filtered by RF filters. The dual injection-locked OEO (DIL-OEO) has been proposed as a solution to this problem. In this work, we describe in detail the construction of a DIL-OEO. We also present experimental data from our systematic study of injection-locking in DIL-OEOs. With this data, we optimize the DIL-OEO, achieving both low phase noise and low spurs. Finally, we present data demonstrating a 60 dB suppression of the nearest-neighbor spur without increasing the phase noise within 1 kHz of the 10 GHz central oscillating mode.

摘要

光电振荡器(OEO)是产生低相位噪声射频(RF)信号的理想源。然而,在X波段频率下,为实现高振荡器品质因数(Q)所需的长光纤延迟线也会导致杂散模式(杂散信号),其间隔过窄,无法被射频滤波器滤除。双注入锁定光电振荡器(DIL-OEO)已被提出作为解决该问题的方案。在这项工作中,我们详细描述了一个双注入锁定光电振荡器的构造。我们还展示了对双注入锁定光电振荡器注入锁定进行系统研究所得的实验数据。利用这些数据,我们对双注入锁定光电振荡器进行了优化,实现了低相位噪声和低杂散信号。最后,我们展示的数据表明,在10 GHz中心振荡模式的1 kHz范围内,在不增加相位噪声的情况下,最近邻杂散信号被抑制了60 dB。

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