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多层纳米间隙阵列用于高性能 SERS 基底。

Multi-layer nanogap array for high-performance SERS substrate.

机构信息

Department of Electrical Engineering, KAIST, Daejeon, Republic of Korea.

出版信息

Nanotechnology. 2011 Jun 10;22(23):235303. doi: 10.1088/0957-4484/22/23/235303. Epub 2011 Apr 11.

DOI:10.1088/0957-4484/22/23/235303
PMID:21483043
Abstract

A multi-layer nanogap array composed of three linearly aligned gold nanogaps is fabricated for a surface-enhanced Raman spectroscopy (SERS) substrate. The overall process for the proposed structure is simple and reliable with the use of a photolithography-free fabrication process, which includes only deposition and etching. Chemical vapor deposition (CVD) is employed to form a uniform and highly controllable nanogap array. The nanogap width, a crucial parameter in SERS, is determined by the sacrificial film thickness of CVD. Experiments on nanogap width and polarization angle dependence are carried out to characterize the fabricated multi-layer nanogap array as an SERS substrate.

摘要

一种由三个线性排列的金纳米间隙组成的多层纳米间隙阵列被制造用于表面增强拉曼光谱(SERS)基底。所提出结构的整体过程简单可靠,使用无光刻制造工艺,仅包括沉积和蚀刻。化学气相沉积(CVD)用于形成均匀且高度可控的纳米间隙阵列。纳米间隙宽度是 SERS 的关键参数,由 CVD 的牺牲膜厚度决定。进行纳米间隙宽度和偏振角依赖性实验,以将所制造的多层纳米间隙阵列表征为 SERS 基底。

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