Cai Hongbing, Wu YuKun, Dai Yanmeng, Pan Nan, Tian Yangchao, Luo Yi, Wang Xiaoping
Opt Express. 2016 Sep 5;24(18):20808-15. doi: 10.1364/OE.24.020808.
Metallic nanogap is very important for a verity of applications in plasmonics. Although several fabrication techniques have been proposed in the last decades, it is still a challenge to produce uniform nanogaps with a few nanometers gap distance and high throughput. Here we present a simple, yet robust method based on the atomic layer deposition (ALD) and lift-off technique for patterning ultranarrow nanogaps array. The ability to accurately control the thickness of the ALD spacer layer enables us to precisely define the gap size, down to sub-5 nm scale. Moreover, this new method allows to fabricate uniform nanogaps array along different directions densely arranged on the wafer-scale substrate. It is demonstrated that the fabricated array can be used as an excellent substrate for surface enhanced Raman scatting (SERS) measurements of molecules, even on flexible substrates. This uniform nanogaps array would also find its applications for the trace detection and biosensors.
金属纳米间隙对于等离子体学中的多种应用非常重要。尽管在过去几十年中已经提出了几种制造技术,但要生产出具有几纳米间隙距离且高通量的均匀纳米间隙仍然是一项挑战。在此,我们提出了一种基于原子层沉积(ALD)和剥离技术的简单而稳健的方法,用于制备超窄纳米间隙阵列。精确控制ALD间隔层厚度的能力使我们能够精确确定间隙尺寸,低至亚5纳米尺度。此外,这种新方法能够在晶圆级基板上沿不同方向密集排列地制造均匀的纳米间隙阵列。结果表明,所制备的阵列即使在柔性基板上也可作为用于分子表面增强拉曼散射(SERS)测量的优良基板。这种均匀的纳米间隙阵列还将在痕量检测和生物传感器方面找到其应用。