Savona Vincenzo
Institut de Théorie des Phénomènes Physiques, Ecole Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland.
J Phys Condens Matter. 2007 Jul 25;19(29):295208. doi: 10.1088/0953-8984/19/29/295208. Epub 2007 Jun 11.
The theory of the linear optical response of excitons in quantum wells and polaritons in planar semiconductor microcavities is reviewed, in the light of the existing experiments. For quantum well excitons, it is shown that disorder mainly affects the exciton centre-of-mass motion and is modelled by an effective Schrödinger equation in two dimensions. For polaritons, a unified model accounting for quantum well roughness and fluctuations of the microcavity thickness is developed. Numerical results confirm that polaritons are mostly affected by disorder acting on the photon component, thus confirming existing studies on the influence of exciton disorder. The polariton localization length is estimated to be in the few-micrometres range, depending on the amplitude of disorder, in agreement with recent experimental findings.
结合现有实验，对量子阱中激子和平面半导体微腔中极化激元的线性光学响应理论进行了综述。对于量子阱激子，研究表明无序主要影响激子质心运动，并通过二维有效薛定谔方程进行建模。对于极化激元，建立了一个统一模型，该模型考虑了量子阱粗糙度和微腔厚度的波动。数值结果证实，极化激元主要受作用于光子分量的无序影响，从而证实了关于激子无序影响的现有研究。根据无序幅度，极化激元的局域化长度估计在几微米范围内，这与最近的实验结果一致。
