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电流丝对间接激子的抗俘获

Anti-trapping of indirect excitons by a current filament.

作者信息

Mouchliadis L, Ivanov A L

机构信息

Department of Physics and Astronomy, Cardiff University, Cardiff CF24 3AA, UK.

出版信息

J Phys Condens Matter. 2007 Jul 25;19(29):295215. doi: 10.1088/0953-8984/19/29/295215. Epub 2007 Jun 11.

Abstract

In order to explain the photoluminescence (PL) of indirect excitons collected from localized spots in experiments with a defocused laser excitation of coupled quantum wells (QWs), we model the in-plane carrier transport and charge distribution with a set of drift-diffusion, Poisson and thermalization equations. The quantum statistical corrections are included in our description via a generalized Einstein relationship and quantum mass action law. The PL spots are attributed to transverse current filaments crossing the structure and injecting electrons in the coupled QWs. The accumulated electron charge forms an anti-trap for indirect excitons. Our model quantitatively reproduces the whole set of the relevant experimental data.

摘要

为了解释在耦合量子阱(QW)的散焦激光激发实验中从局域光斑收集到的间接激子的光致发光(PL),我们用一组漂移扩散、泊松和热化方程对平面内载流子输运和电荷分布进行建模。通过广义爱因斯坦关系和量子质量作用定律,量子统计修正被纳入我们的描述中。PL光斑归因于穿过结构并向耦合量子阱中注入电子的横向电流丝。累积的电子电荷形成了间接激子的反陷阱。我们的模型定量地再现了整套相关实验数据。

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