National Institute of Pharmaceutical Education and Research (NIPER) , Sector 67, SAS Nagar (Mohali), Punjab 160 062, India.
Mol Pharm. 2011 Jun 6;8(3):814-22. doi: 10.1021/mp100411v. Epub 2011 May 10.
In the present study, the role of α-relaxation toward isothermal crystallization of amorphous celecoxib was studied using dielectric spectroscopy (DES). The dielectric response of the α-relaxation was measured as a function of frequency (10⁻¹ to 10⁶ Hz), isothermally at every 4 K interval in the range of 303.15 to 443.15 K. The dielectric loss spectrum at each temperature was analyzed using the Havriliak Negami (HN) equation to extract the characteristic relaxation time, τ(HN). Two Vogel-Fulcher-Tammann (VFT) functions were required for representing the temperature dependence of τ(HN) across the temperature range of study. The VFT fit parameters obtained from the two regions varied drastically pointing toward the underlying differences in the dynamics of relaxation above and below the crossover. Later, in situ isothermal crystallization experiments were performed at 363.15, 368.15, 373.15, and 378.15 K. The conversion rate, obtained from the normalized dielectric strength, was modeled using the Avrami model, which indicated the possibility of different crystallization mechanism at higher crystallization temperatures. HN shape parameters, α(HN) and product of α(HN) and β(HN), were analyzed during the course of crystallization to understand the dynamics of amorphous phase when crystallites were being evolved. HN shape parameters indicated α-like motions were affected, whereas β-like remained unaffected by the crystallization temperature. Characteristic crystallization time, τ(cr), obtained from Avrami fits, showed Arrhenius type of temperature dependence (R² = 0.999). A plot between log τ(cr) and log τ(HN) show a linear regression with R² of 0.997 indicating the direct correlation between these two phenomena. However, the coupling coefficient was found to be varying within the temperature range of study, indicating tendency of crystallization to be more diffusion controlled at higher crystallization temperatures. With different crystalline solid phase crystallizing at higher crystallization temperature, complemented with direct correlation between log τ(cr) and log τ(HN), Avrami modeling of crystallization and HN shape parameter analysis, the role of α-relaxation in the crystallization of amorphous celecoxib at T > T(g) is emphasized.
在本研究中,使用介电谱(DES)研究了 α-弛豫对无定形塞来昔布等温结晶的作用。作为频率的函数(10⁻¹至 10⁶ Hz),在 303.15 至 443.15 K 的范围内,每隔 4 K 等温热力学地测量了 α-弛豫的介电响应。在每个温度下的介电损耗谱使用 Havriliak-Negami(HN)方程进行分析,以提取特征弛豫时间 τ(HN)。需要两个 Vogel-Fulcher-Tammann(VFT)函数来表示研究温度范围内 τ(HN)的温度依赖性。从两个区域获得的 VFT 拟合参数差异很大,表明弛豫动力学在交叉点以上和以下存在潜在差异。后来,在 363.15、368.15、373.15 和 378.15 K 进行了原位等温结晶实验。从归一化介电强度获得的转化率使用 Avrami 模型进行建模,该模型表明在较高的结晶温度下可能存在不同的结晶机制。在结晶过程中分析了 HN 形状参数 α(HN)和 α(HN)与 β(HN)的乘积,以了解在晶体形成时无定形相的动力学。HN 形状参数表明 α 样运动受到影响,而 β 样运动不受结晶温度的影响。从 Avrami 拟合获得的特征结晶时间 τ(cr)显示出与温度相关的 Arrhenius 类型(R² = 0.999)。log τ(cr)和 log τ(HN)之间的关系图显示出线性回归,R²为 0.997,表明这两种现象之间存在直接相关性。然而,在研究温度范围内发现耦合系数发生变化,表明在较高的结晶温度下,结晶过程更受扩散控制。由于较高结晶温度下有不同的晶相结晶,以及 log τ(cr)和 log τ(HN)之间的直接相关性、结晶的 Avrami 建模和 HN 形状参数分析,强调了 α-弛豫在 T > T(g)时无定形塞来昔布结晶中的作用。