Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611, USA.
ACS Appl Mater Interfaces. 2011 Jun;3(6):1910-7. doi: 10.1021/am200120j. Epub 2011 May 17.
Understanding the contact-semiconductor interface is important in determining the performance of a semiconductor device. This study investigated the contact chemistry of BiI(3) single crystal with Au, Pd, and Pt electrodes using X-ray photoelectron spectroscopy (XPS), a technique widely used to probe the interfacial chemistry of many materials. Chemical reactions were identified on the BiI(3) surface for the case of Pd and Pt contacts, while Au showed no reactivity with BiI(3). The difference in reactivities correlated with different surface morphologies of the contact on the BiI(3) surface, which was evidenced by atomic force microscopy (AFM) characterization. The dark resistivity of the BiI(3) crystal with above contact materials was measured by I-V characterization. The highest resistivity was obtained when Au was employed as the contact. These results suggest that Au is better than Pd and Pt as the contact material for BiI(3) single crystal.
了解接触半导体界面对于确定半导体器件的性能非常重要。本研究使用 X 射线光电子能谱（XPS）研究了 BiI(3)单晶与 Au、Pd 和 Pt 电极的接触化学，XPS 是一种广泛用于探测许多材料界面化学的技术。对于 Pd 和 Pt 接触的情况，在 BiI(3)表面上识别到了化学反应，而 Au 与 BiI(3)没有反应性。反应性的差异与 BiI(3)表面上接触的不同表面形貌相关，这可以通过原子力显微镜（AFM）表征来证明。通过 I-V 特性测量了具有上述接触材料的 BiI(3)晶体的暗电阻率。当 Au 用作接触时，获得了最高的电阻率。这些结果表明，与 Pd 和 Pt 相比，Au 是 BiI(3)单晶更好的接触材料。
