Uche C Z, Cree M J, Round W H
School of Engineering, University of Waikato, Private Bag 3105, Hamilton 3240, New Zealand.
Australas Phys Eng Sci Med. 2011 Sep;34(3):409-14. doi: 10.1007/s13246-011-0076-2. Epub 2011 May 10.
A Monte Carlo approach was used to study the effects of Doppler energy broadening on Compton camera performance. The GEANT4 simulation toolkit was used to model the radiation transport and interactions with matter in a simulated Compton camera. The low energy electromagnetic physics model of GEANT4 incorporating Doppler broadening developed by Longo et al. was used in the simulations. The camera had a 9 × 9 cm scatterer and a 10 × 10 cm absorber with a scatterer to-absorber separation of 5 cm. Modelling was done such that only the effects of Doppler broadening were taken into consideration and effects of scatterer and absorber thickness and pixelation were not taken into account, thus a 'perfect' Compton camera was assumed. Scatterer materials were either silicon or germanium and the absorber material was cadmium zinc telluride. Simulations were done for point sources 10 cm in front of the scatterer. The results of the simulations validated the use of the low energy model of GEANT4. As expected, Doppler broadening was found to degrade the Compton camera imaging resolution. For a 140.5 keV source the resulting full-width-at-half-maximum (FWHM) of the point source image without accounting for Doppler broadening and using a silicon scatterer was 0.58 mm. This degraded to 7.1 mm when Doppler broadening was introduced and degraded further to 12.3 mm when a germanium scatterer was used instead of silicon. But for a 511 keV source, the FWHM was better than for a 140 keV source. The FWHM improved to 2.4 mm for a silicon scatterer and 4.6 mm for a germanium scatterer. Our result for silicon at 140.5 keV is in very good agreement with that published by An et al.
采用蒙特卡罗方法研究多普勒能量展宽对康普顿相机性能的影响。利用GEANT4模拟工具包对模拟康普顿相机中的辐射传输及与物质的相互作用进行建模。模拟中使用了由隆戈等人开发的包含多普勒展宽的GEANT4低能电磁物理模型。该相机有一个9×9厘米的散射体和一个10×10厘米的吸收体,散射体与吸收体之间的间距为5厘米。建模时仅考虑多普勒展宽的影响,而不考虑散射体和吸收体厚度及像素化的影响,因此假设为一个“完美”的康普顿相机。散射体材料为硅或锗,吸收体材料为碲锌镉。针对位于散射体前方10厘米处的点源进行模拟。模拟结果验证了GEANT4低能模型的适用性。正如预期的那样,发现多普勒展宽会降低康普顿相机的成像分辨率。对于140.5千电子伏的源,在不考虑多普勒展宽且使用硅散射体时,点源图像的半高全宽(FWHM)为0.58毫米。引入多普勒展宽后,该值降至7.1毫米,当使用锗散射体代替硅时,进一步降至12.3毫米。但对于511千电子伏的源,FWHM比140千电子伏的源更好。对于硅散射体,FWHM提高到2.4毫米,对于锗散射体,FWHM为4.6毫米。我们在140.5千电子伏下对硅的研究结果与安等人发表的结果非常吻合。