School of Computer Science, The University of Manchester, Manchester, UK.
Nanotechnology. 2011 Jul 1;22(26):265715. doi: 10.1088/0957-4484/22/26/265715. Epub 2011 May 18.
The performance of field-effect transistors based on single-walled carbon nanotube (SWCNT) networks depends on the electrical percolation of semiconducting and metallic nanotube pathways within the network. We present voltage-contrast scanning electron microscopy (VC-SEM) as a new tool for imaging percolation in a SWCNT network with nano-scale resolution. Under external bias, the secondary-electron contrast of SWCNTs depends on their conductivity, and therefore it is possible to image the preferred conduction pathways within a network by following the contrast evolution under bias in a scanning electron microscope. The experimental VC-SEM results are correlated to percolation models of SWCNT-bundle networks.
场效应晶体管基于单壁碳纳米管（SWCNT）网络的性能取决于网络中半导体和金属纳米管路径的电渗滤。我们提出了电压对比扫描电子显微镜（VC-SEM）作为一种新的工具，用于以纳米级分辨率成像 SWCNT 网络中的渗滤。在外加偏压下，SWCNT 的二次电子对比度取决于它们的导电性，因此可以通过在扫描电子显微镜中跟踪偏压下的对比度演变来对网络中的优先传导路径进行成像。实验的 VC-SEM 结果与 SWCNT 束网络的渗滤模型相关联。
