Materials Reliability Division, National Institute of Standards and Technology, Boulder, CO 80305, USA.
Nanotechnology. 2011 Jul 1;22(26):265713. doi: 10.1088/0957-4484/22/26/265713. Epub 2011 May 18.
We investigate the electrical reliability of nanoscale lines of highly aligned, networked, metallic/semiconducting single-walled carbon nanotubes (SWCNTs) fabricated through a template-based fluidic assembly process. We find that these SWCNT networks can withstand DC current densities larger than 10 MA cm(-2) for several hours and, in some cases, several days. We develop test methods that show that the degradation rate, failure predictability and total device lifetime can be linked to the initial resistance. Scanning electron and transmission electron microscopy suggest that fabrication variability plays a critical role in the rate of degradation, and we offer an empirical method of quickly determining the long-term performance of a network. We find that well-fabricated lines subject to constant electrical stress show a linear accumulation of damage reminiscent of electromigration in metallic interconnects, and we explore the underlying physical mechanisms that could cause such behavior.
我们研究了通过基于模板的流体组装工艺制造的高度取向、网络化的金属/半导体单壁碳纳米管 (SWCNT) 纳米线的电可靠性。我们发现这些 SWCNT 网络可以承受大于 10 MA cm(-2) 的直流电流密度数小时，在某些情况下甚至数天。我们开发了测试方法，表明降解率、可预测性和总设备寿命可以与初始电阻联系起来。扫描电子显微镜和透射电子显微镜表明，制造变异性在降解速率中起着关键作用，我们提供了一种快速确定网络长期性能的经验方法。我们发现，经过良好制造且受到恒定电应力的线会出现类似于金属互连中的电迁移的线性损伤积累，我们探讨了可能导致这种行为的潜在物理机制。
