Nanogenesis Division, AEgis Technologies, 410 Jan Davis Drive, Huntsville, Alabama 35806, USA.
Opt Lett. 2011 Jun 1;36(11):1984-6. doi: 10.1364/OL.36.001984.
We theoretically discuss all-optical switching at the Fano resonances of subwavelength gratings made of a chalcogenide glass (As(2)S(3)). Particular attention is devoted to the case in which the grating possesses extremely narrow slits (channels ranging from a∼10 nm to a∼40 nm). The remarkable local field enhancement available in these situations conspires to yield low-threshold switching intensities (~50 MW/cm(2)) at telecommunication wavelengths for extremely thin (d∼200 nm) gratings when a realistic value of the As(2)S(3) cubic nonlinearity is used.
我们从理论上讨论了由硫属玻璃（As(2)S(3)）制成的亚波长光栅的 Fano 共振处的全光开关。特别关注的是光栅具有极窄狭缝（通道范围从 a∼10nm 到 a∼40nm）的情况。在这些情况下，可用的显著局部场增强有助于在使用实际的 As(2)S(3)立方非线性值时，在极薄（d∼200nm）光栅的情况下，在电信波长下实现低阈值开关强度（~50MW/cm(2)）。
