亚波长直径 As2Se3 硫属化物光纤中布拉格光栅的制作。

Fabrication of Bragg gratings in subwavelength diameter As2Se3 chalcogenide wires.

机构信息

Department of Electrical and Computer Engineering, McGill University, Montreal, Quebec H3A 2A7, Canada.

出版信息

Opt Lett. 2011 Aug 1;36(15):2886-8. doi: 10.1364/OL.36.002886.

DOI:10.1364/OL.36.002886

Abstract

The inscription of Bragg gratings in chalcogenide (As(2)Se(3)) wires with subwavelength diameter is proposed and demonstrated. A modified transverse holographic method employing He-Ne laser light at a wavelength of λ(w)=633 nm allows the writing of Bragg grating reflectors in the 1550 nm band. The gratings reach an extinction ratio of 40 dB in transmission and a negative photo-induced index change of Δn ∼ 10(-2). The inscription of Bragg gratings in chalcogenide microwires will enable the fabrication of new devices with applications in nonlinear optics and sensing in the near- to mid-IR region of wavelengths.

摘要

本文提出并演示了在亚波长直径的硫属化物（As(2)Se(3)) 线中写入布拉格光栅的方法。采用波长为 λ(w)=633nm 的氦氖激光的改进横向全息方法，可以在 1550nm 波段写入布拉格光栅反射器。这些光栅在传输中达到 40dB 的消光比和负光致折射率变化 Δn ∼ 10(-2)。在硫属化物微线中写入布拉格光栅将能够制造具有在近红外到中红外波长区域的非线性光学和传感应用的新型器件。