Kiani Amirkianoosh, Venkatakrishnan Krishnan, Tan Bo, Venkataramanan Venkat
Department of Mechanical and Industrial Engineering, Ryerson University, 350 Victoria Street, Toronto, Ontario M5B 2K3, Canada.
Opt Express. 2011 May 23;19(11):10834-42. doi: 10.1364/OE.19.010834.
In this study we report a new method for maskless lithography fabrication process by a combination of direct silicon oxide etch-stop layer patterning and wet alkaline etching. A thin layer of etch-stop silicon oxide of predetermined pattern was first generated by irradiation with high repetition (MHz) ultrafast (femtosecond) laser pulses in air and at atmospheric pressure. The induced thin layer of silicon oxide is used as an etch stop during etching process in alkaline etchants such as KOH. Our proposed method has the potential to enable low-cost, flexible, high quality patterning for a wide variety of application in the field of micro- and nanotechnology, this technique can be leading to a promising solution for maskless lithography technique. A Scanning Electron Microscope (SEM), optical microscopy, Micro-Raman, Energy Dispersive X-ray (EDX) and X-ray diffraction spectroscopy were used to analyze the silicon oxide layer induced by laser pulses.
在本研究中，我们报告了一种通过直接氧化硅蚀刻停止层图案化和湿法碱性蚀刻相结合的无掩模光刻制造新工艺。首先，在空气中和大气压下，用高重复频率（MHz）超快（飞秒）激光脉冲辐照，生成具有预定图案的蚀刻停止氧化硅薄层。在诸如KOH的碱性蚀刻剂蚀刻过程中，诱导生成的氧化硅薄层用作蚀刻停止层。我们提出的方法有潜力为微纳技术领域的各种应用实现低成本、灵活、高质量的图案化，该技术可为无掩模光刻技术带来有前景的解决方案。使用扫描电子显微镜（SEM）、光学显微镜、显微拉曼光谱、能量色散X射线（EDX）和X射线衍射光谱对激光脉冲诱导的氧化硅层进行分析。
