Kiani Amirkianoosh, Venkatakrishnan Krishnan, Tan Bo
Department of Mechanical and Industrial Engineering, Ryerson University, 350 Victoria Street, Toronto, ON, M5B 2K3 Canada.
Opt Express. 2010 Feb 1;18(3):1872-8. doi: 10.1364/OE.18.001872.
In this study we report for the first time a method for direct patterning of silicon oxide on a silicon substrate by irradiation with a femtosecond laser of Mega Hertz pulse frequency under ambient condition. Embossed lines of silicon oxide with around 3 approximately 4 microm width and less than 100 nm height were formed by controlling the parameters such as laser pulse power and frequency rate. A Scanning Electron Microscope (SEM), an optical microscopy and a Micro-Raman and Energy Dispersive X-ray (EDX) spectroscopy were used to analyze the silicon oxide layer.
在本研究中，我们首次报道了一种在环境条件下通过用兆赫兹脉冲频率的飞秒激光照射在硅衬底上直接对氧化硅进行图案化的方法。通过控制激光脉冲功率和频率等参数，形成了宽度约为3至4微米、高度小于100纳米的氧化硅压纹线。使用扫描电子显微镜（SEM）、光学显微镜以及显微拉曼和能量色散X射线（EDX）光谱对氧化硅层进行分析。
