Department of Advanced Materials and Nanotechnology, College of Engineering, Peking University, Beijing 100871, China.
ACS Appl Mater Interfaces. 2011 Jul;3(7):2259-64. doi: 10.1021/am200479d. Epub 2011 Jun 16.
To achieve the applications of graphene, the modulation of its electrical properties is of great significance. The element doping might give a promising approach to produce fascinating properties of graphene. Herein we report a facile chemical doping method to obtain nitrogen-doped (N-doped) few-layer graphene sheets through supercritical (SC) reaction in acetonitrile at temperature as low as 310 °C, using expanded graphite as starting material. X-ray photoelectron spectroscopy analysis revealed that the level of nitrogen-doping (N-doping) increased from 1.57 to 4.56 at % when the reaction time was tuned from 2 to 24 h. Raman spectrum confirmed that the resulting N-doped few-layer graphene by SC reaction maintain high quality without any significant structural defects. Electrical measurements indicated that N-doped few-layer graphene sheets exhibit a typical n-type field-dependent behavior, suggesting the N-doping into the lattice of graphene. This work provides a convenient chemical route to the scalable production of N-doped graphene for potential applications in nanoelectronic devices.
为了实现石墨烯的应用，调控其电学性能具有重要意义。元素掺杂可能为产生石墨烯的迷人性质提供了一种有前途的方法。在此，我们报告了一种简便的化学掺杂方法，即在 310°C 的温度下，通过乙腈中超临界（SC）反应，以膨胀石墨为起始原料，获得氮掺杂（N 掺杂）少层石墨烯片。X 射线光电子能谱分析表明，当反应时间从 2 小时调至 24 小时时，氮掺杂（N 掺杂）水平从 1.57%增加到 4.56%。拉曼光谱证实，通过 SC 反应得到的 N 掺杂少层石墨烯保持了高质量，没有任何明显的结构缺陷。电测量表明，N 掺杂少层石墨烯片表现出典型的 n 型场依赖行为，表明 N 掺杂进入了石墨烯的晶格。这项工作为 N 掺杂石墨烯的大规模生产提供了一种简便的化学途径，有望应用于纳米电子器件。
