Beijing National Laboratory for Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, P. R. China.
J Am Chem Soc. 2012 Jul 11;134(27):11060-3. doi: 10.1021/ja302483t. Epub 2012 Jun 26.
The ability to dope graphene is highly important for modulating electrical properties of graphene. However, the current route for the synthesis of N-doped graphene by chemical vapor deposition (CVD) method mainly involves high growth temperature using ammonia gas or solid reagent melamine as nitrogen sources, leading to graphene with low doping level, polycrystalline nature, high defect density and low carrier mobility. Here, we demonstrate a self-assembly approach that allows the synthesis of single-layer, single crystal and highly nitrogen-doped graphene domain arrays by self-organization of pyridine molecules on Cu surface at temperature as low as 300 °C. These N-doped graphene domains have a dominated geometric structure of tetragonal-shape, reflecting the single crystal nature confirmed by electron-diffraction measurements. The electrical measurements of these graphene domains showed their high carrier mobility, high doping level, and reliable N-doped behavior in both air and vacuum.
掺杂石墨烯的能力对于调节石墨烯的电学性质非常重要。然而，目前通过化学气相沉积（CVD）方法合成 N 掺杂石墨烯的途径主要涉及使用氨气或固体试剂三聚氰胺作为氮源的高温生长，导致石墨烯的掺杂水平低、多晶性、高缺陷密度和低载流子迁移率。在这里，我们展示了一种自组装方法，通过在 300°C 下在 Cu 表面上自组织吡啶分子，可以合成单层、单晶和高度 N 掺杂的石墨烯畴阵列。这些 N 掺杂的石墨烯畴具有占主导地位的四方形状的几何结构，反映了电子衍射测量所证实的单晶性质。这些石墨烯畴的电学测量显示了它们在空气和真空中的高载流子迁移率、高掺杂水平和可靠的 N 掺杂行为。
